Magafas, L.Kalomiros, J.2015-06-242024-09-272015-06-242024-09-272007-12http://www.sciencedirect.com/science/article/pii/S0026269207002844https://repository2024.ihu.gr/handle/123456789/1455The optimization of optoelectronic properties of Al/a-SiC:H Schottky diodes grown as Al/a-SiC:H/c-Si(n) structures is studied by means of thermal annealing of a-SiC:H thin films. According to the spectral response of the Schottky diodes the measured quantum efficiency, ηmeasured, increases with increasing annealing temperature (400–600 °C), whereas ηmeasured decreases for Ta>600 °C. For Ta=600 °C, optimum material quality of a-SiC:H films is achieved and the spectral response of the Al/a-SiC:H/c-S(n) structures present very high and almost constant values (ηmeasured⩾80%) for the whole range of wavelengths from 500 up to 850 nm. These results show that our Al/a-SiC:H/c-S(n) structures can be very attractive as optical sensors. Diffusion length calculations as well as the mobility by lifetime product (μτ)p of the minority carriers (holes) of a-SiC:H films present a dependence on Ta similar to that of the measured quantum efficiency. Finally, the quantum efficiency of films processed with Ta=675 °C is found to increase when the Al/a-SiC:H/c-S(n) structures are exposed to hydrogen, a result that could be promising for the construction of a hydrogen detection sensor.6enAttribution-NonCommercial-NoDerivatives 4.0 Διεθνέςhttp://creativecommons.org/licenses/by-nc-nd/4.0/Άρθρο σε επιστημονικό περιοδικό10.1016/j.mejo.2007.09.016Optical sensorSchottky diodeThermal annealingMicroelectronics